US 9,812,412 B2
Chip part having passive elements on a common substrate
Takuma Shimoichi, Kyoto (JP); and Yasuhiro Kondo, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Dec. 28, 2015, as Appl. No. 14/980,404.
Claims priority of application No. 2014-262842 (JP), filed on Dec. 25, 2014.
Prior Publication US 2016/0190076 A1, Jun. 30, 2016
Int. Cl. H01L 23/66 (2006.01); H01L 49/02 (2006.01); H01L 27/01 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 27/016 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 2223/6672 (2013.01); H01L 2924/0002 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A chip part comprising:
a semiconductor substrate, made of silicon, having an element formation surface and a back surface opposite to the element formation surface, and including a first trench formed in the element formation surface, the back surface of the substrate being a ground surface:
a surface protective insulation film covering the element formation surface, having a first opening and a second opening which are formed apart from each other:
a first electrode and a second electrode which are formed apart from each other on the element formation surface of the substrate, the first electrode filling the first opening and having a first extending portion extending out of the first opening over the surface protective insulation film, the second electrode filling the second opening and having a second extending portion extending out of the second opening over the surface protective insulation film: and
a circuit network which is formed between the first electrode and the second electrode, the circuit network including
a first passive element including a first conductive member embedded in the first trench, the first trench being formed between the first electrode and the second electrode, and
a second passive element including a second conductive member formed on the substrate outside the first trench, wherein no electrode is formed on a surface other than the element formation surface of the substrate.