US 9,812,411 B2
Semiconductor device, inverter circuit, and drive device
Kentaro Ikeda, Kawasaki (JP); Kazuto Takao, Tsukuba (JP); and Ryosuke Iijima, Setagaya (JP)
Assigned to Kabushiki Kaisha Toshiba, Minato-ku (JP)
Filed by Kabushiki Kaisha Toshiba, Minato-ku (JP)
Filed on Aug. 12, 2016, as Appl. No. 15/235,404.
Claims priority of application No. 2015-179373 (JP), filed on Sep. 11, 2015.
Prior Publication US 2017/0077048 A1, Mar. 16, 2017
Int. Cl. H01L 23/64 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H01L 23/373 (2006.01); H01L 23/58 (2006.01); H01L 23/427 (2006.01); H01L 23/62 (2006.01); H02M 7/00 (2006.01)
CPC H01L 23/645 (2013.01) [H01L 23/3735 (2013.01); H01L 23/427 (2013.01); H01L 23/585 (2013.01); H01L 23/62 (2013.01); H01L 28/40 (2013.01); H01L 29/1608 (2013.01); H01L 29/7805 (2013.01); H02M 7/003 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first electrode;
a second electrode;
an alternating-current electrode;
a first switching element provided between the first electrode and the alternating-current electrode; and
a second switching element provided between the second electrode and the alternating-current electrode, wherein
the first switching element and the second switching element are electrically connected in series between the first electrode and the second electrode; and
the alternating-current electrode is electrically connected between the first switching element and the second switching element, wherein
distances from the alternating-current electrode to the first electrode and the second electrode are longer than a distance between the first electrode and the second electrode.