US 9,812,410 B2
Lid structure for a semiconductor device package and method for forming the same
Kuan-Lin Ho, Hsinchu (TW); Chin-Liang Chen, Kaohsiung (TW); Chi-Yang Yu, Taoyuan (TW); and Yu-Chih Liu, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Dec. 31, 2015, as Appl. No. 14/985,504.
Prior Publication US 2017/0194268 A1, Jul. 6, 2017
Int. Cl. H01L 23/12 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/367 (2006.01); H01L 21/78 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 21/4853 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 23/367 (2013.01); H01L 23/3675 (2013.01); H01L 23/49816 (2013.01); H01L 24/11 (2013.01); H01L 24/17 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a die structure formed over a substrate, the die structure having a die length;
an adhesion layer formed over a top surface and on sidewalls of the die structure;
a lid structure attached to the top surface of the die structure by the adhesion layer, wherein the lid structure comprises a top portion with a top length and a bottom portion with a bottom length, the top length being greater than the bottom length, and the bottom length being greater than the die length; and
a package layer formed on sidewalls of the lid structure and the die structure, wherein a sidewall of the bottom portion of the lid structure is not aligned with a sidewall of the die structure.