US 9,812,407 B2
Self-destructing electronic device
Jeff A Ridley, Shorewood, MN (US); Steven Tin, Plymouth, MN (US); and Jeffrey James Kriz, Eden Prairie, MN (US)
Assigned to Honeywell International Inc., Morris Plains, NJ (US)
Filed by Honeywell International Inc., Morristown, NJ (US)
Filed on Sep. 29, 2015, as Appl. No. 14/869,367.
Prior Publication US 2017/0092598 A1, Mar. 30, 2017
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 23/573 (2013.01) 13 Claims
OG exemplary drawing
 
1. A self-destructing device comprising:
a top layer including at least one active electronic region and at least one thermal destruction trigger;
a middle layer including semiconducting material and at least one chamber, wherein the at least one chamber is enclosed by the semiconducting material, wherein the at least one chamber contains an etchant material configured to react in an exothermic manner with the semiconducting material to generate heat;
a first oxide layer provided between the top layer and the middle layer;
a second oxide layer provided between the semiconducting material and the at least one chamber; and
wherein in response to activation of the at least one thermal destruction trigger, the self-destructing device is configured to:
generate heat to cause decomposition of at least a first portion of the etchant material;
decompose at least a first portion of the etchant material to cause etching of the second oxide layer;
etch at least a second portion of the second oxide layer provided between the semiconducting material and the at least one chamber at a first temperature to cause exposure of the etchant material to the semiconducting material;
expose the etchant material to the semiconducting material to cause an exothermic reaction generating more heat;
enable spread of the exothermic reaction to etch at least a third portion of the first oxide layer; and
etch the top layer through at least one void created in the first oxide layer.