| US 9,812,404 B2 | ||
| Electrical connection around a crackstop structure | ||
| Michael J. Shapiro, Austin, TX (US); John A. Fitzsimmons, Poughkeepsie, NY (US); and Natalia Borjemscaia, Wappingers Falls, NY (US) | ||
| Assigned to GLOBALFOUNDRIES INC, Grand Cayman (KY) | ||
| Filed by GLOBALFOUNDRIES INC., Grand Cayman (KY) | ||
| Filed on Dec. 30, 2015, as Appl. No. 14/984,547. | ||
| Prior Publication US 2017/0194265 A1, Jul. 6, 2017 | ||
| Int. Cl. H01L 21/70 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01) | ||
| CPC H01L 23/562 (2013.01) [H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01)] | 18 Claims |
| 1. A structure, comprising:
a conductive material;
a dielectric material formed over the conductive material;
a non-corrosive conductive material in at least one opening of the dielectric material and in direct electrical contact with
the conductive material;
a crackstop structure formed over the dielectric material;
at least a first wiring layer on a first side of the crackstop structure and in electrical contact with the non-corrosive
conductive material in a first opening of the dielectric material above the conductive material; and
at least a second wiring layer on a second side of the crackstop structure and in electrical contact with the non-corrosive
conductive material in a second opening of the dielectric material above the conductive material, wherein the conductive material
is a copper through-silicon via (TSV) structure.
|