US 9,812,404 B2
Electrical connection around a crackstop structure
Michael J. Shapiro, Austin, TX (US); John A. Fitzsimmons, Poughkeepsie, NY (US); and Natalia Borjemscaia, Wappingers Falls, NY (US)
Assigned to GLOBALFOUNDRIES INC, Grand Cayman (KY)
Filed by GLOBALFOUNDRIES INC., Grand Cayman (KY)
Filed on Dec. 30, 2015, as Appl. No. 14/984,547.
Prior Publication US 2017/0194265 A1, Jul. 6, 2017
Int. Cl. H01L 21/70 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/562 (2013.01) [H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A structure, comprising:
a conductive material;
a dielectric material formed over the conductive material;
a non-corrosive conductive material in at least one opening of the dielectric material and in direct electrical contact with the conductive material;
a crackstop structure formed over the dielectric material;
at least a first wiring layer on a first side of the crackstop structure and in electrical contact with the non-corrosive conductive material in a first opening of the dielectric material above the conductive material; and
at least a second wiring layer on a second side of the crackstop structure and in electrical contact with the non-corrosive conductive material in a second opening of the dielectric material above the conductive material, wherein the conductive material is a copper through-silicon via (TSV) structure.