US 9,812,400 B1 | ||
Contact line having insulating spacer therein and method of forming same | ||
Veeraraghavan S. Basker, Schenectady, NY (US); Keith H. Tabakman, Gansevoort, NY (US); Patrick D. Carpenter, Saratoga Springs, NY (US); Guillaume Bouche, Albany, NY (US); and Michael V. Aquilino, Saratoga Springs, NY (US) | ||
Assigned to GLOBALFOUNDRIES INC, Grand Cayman (KY) | ||
Filed by GLOBALFOUNDRIES INC., Grand Cayman (KY) | ||
Filed on May 13, 2016, as Appl. No. 15/154,367. | ||
Int. Cl. H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/336 (2006.01); H01L 23/535 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01) |
CPC H01L 23/535 (2013.01) [H01L 21/76841 (2013.01); H01L 21/76895 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] | 15 Claims |
1. A method of forming contact line spacers, the method comprising:
forming a liner layer within a first trench over an exposed first source/drain epitaxial region of a fin-shaped field-effect-transistor
(FINFET) to substantially line the first trench, and forming the liner layer within a second trench over an exposed second
source/drain epitaxial region of the FINFET to substantially line the second trench;
forming a sacrificial material over the liner layer within the first trench and the second trench to substantially fill the
first trench and the second trench;
removing a portion of the sacrificial material and a portion of the liner layer from the first trench to expose a first portion
of the first source/drain epitaxial region thereunder and from the second trench to expose a second portion of the second
source/drain epitaxial region thereunder;
forming a dielectric film over the exposed first portion of the first source/drain epitaxial region within the first trench
to form a first contact line spacer, and forming the dielectric film over the exposed second portion of the second source/drain
epitaxial region within the second trench to form a second contact line spacer; and
planarizing to a top surface of the dielectric layer.
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