US 9,812,400 B1
Contact line having insulating spacer therein and method of forming same
Veeraraghavan S. Basker, Schenectady, NY (US); Keith H. Tabakman, Gansevoort, NY (US); Patrick D. Carpenter, Saratoga Springs, NY (US); Guillaume Bouche, Albany, NY (US); and Michael V. Aquilino, Saratoga Springs, NY (US)
Assigned to GLOBALFOUNDRIES INC, Grand Cayman (KY)
Filed by GLOBALFOUNDRIES INC., Grand Cayman (KY)
Filed on May 13, 2016, as Appl. No. 15/154,367.
Int. Cl. H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/336 (2006.01); H01L 23/535 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/535 (2013.01) [H01L 21/76841 (2013.01); H01L 21/76895 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of forming contact line spacers, the method comprising:
forming a liner layer within a first trench over an exposed first source/drain epitaxial region of a fin-shaped field-effect-transistor (FINFET) to substantially line the first trench, and forming the liner layer within a second trench over an exposed second source/drain epitaxial region of the FINFET to substantially line the second trench;
forming a sacrificial material over the liner layer within the first trench and the second trench to substantially fill the first trench and the second trench;
removing a portion of the sacrificial material and a portion of the liner layer from the first trench to expose a first portion of the first source/drain epitaxial region thereunder and from the second trench to expose a second portion of the second source/drain epitaxial region thereunder;
forming a dielectric film over the exposed first portion of the first source/drain epitaxial region within the first trench to form a first contact line spacer, and forming the dielectric film over the exposed second portion of the second source/drain epitaxial region within the second trench to form a second contact line spacer; and
planarizing to a top surface of the dielectric layer.