US 9,812,397 B2
Method of forming hybrid diffusion barrier layer and semiconductor device thereof
Kai-Shiang Kuo, Hsinchu (TW); Ken-Yu Chang, Hsinchu (TW); Ya-Lien Lee, Baoshan Township (TW); and Hung-Wen Su, Jhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu (TW)
Filed on Dec. 31, 2014, as Appl. No. 14/587,019.
Application 14/587,019 is a division of application No. 13/833,794, filed on Mar. 15, 2013, granted, now 8,962,473.
Prior Publication US 2015/0108649 A1, Apr. 23, 2015
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01)
CPC H01L 23/53238 (2013.01) [H01L 21/768 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76867 (2013.01); H01L 21/76877 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 21/2855 (2013.01); H01L 21/28562 (2013.01); H01L 2924/0002 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a dielectric layer disposed over the semiconductor substrate;
at least one diffusion barrier layer disposed over a wall of an opening in the dielectric layer, the at least one diffusion barrier layer comprising alternating layers of two materials; and
a liner layer over the at least one diffusion barrier layer,
wherein the at least one diffusion barrier layer comprises:
at least one first layer comprising TaNx, wherein x is a number in the range of from 0.5 to 1.5;
at least one, layer comprising tantalum nitride (TaN), wherein the atomic ratio of tantalum (Ta) to nitrogen (N) is substantially 1:1, and
at least a second layer comprising TaNx, wherein x is a number in the range of from 0.5 to 1.5, and being different from the at least one layer comprising tantalum nitride (TaN).
 
10. A semiconductor device, comprising:
a semiconductor substrate;
a dielectric layer disposed over the semiconductor substrate;
at least one nitride layer disposed over a wall of an opening in the dielectric layer, the at least one nitride layer comprising alternating layers of metal nitrides; and
a liner layer over the at least one nitride layer,
wherein the at least one nitride layer comprises:
at least one first layer comprising TaNx, wherein x is a number in the range of from 0.5 to 1.5;
at least one layer comprising tantalum nitride (TaN), wherein the atomic ratio of tantalum (Ta) to nitrogen (N) is substantially 1:1, and
at least a second layer comprising TaNx, wherein x is a number in the range of from 0.5 to 1.5, and being different from the at least one layer comprising TaN.