US 9,812,395 B2
Methods of forming an interconnect structure using a self-ending anodic oxidation
Jenn-Gwo Hwu, Taipei (TW); Wei-Cheng Tian, Taipei (TW); Samuel C. Pan, Hsinchu (TW); Chao-Hsiung Wang, Hsin-Chu (TW); and Chi-Wen Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited & National Taiwan University, (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW); and National Taiwan University, Taipei (TW)
Filed on Oct. 7, 2014, as Appl. No. 14/507,918.
Prior Publication US 2016/0099172 A1, Apr. 7, 2016
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/528 (2013.01) [H01L 21/7682 (2013.01); H01L 21/76801 (2013.01); H01L 21/76885 (2013.01); H01L 21/76888 (2013.01); H01L 23/522 (2013.01); H01L 23/5283 (2013.01); H01L 2221/1094 (2013.01); H01L 2924/0002 (2013.01)] 25 Claims
OG exemplary drawing
1. A method of forming an interconnect structure, comprising:
forming a protruding structure on a substrate traversing between a first connection region and a second connection region defined in the substrate, wherein the protruding structure is formed of a single material or a single compound material; and
oxidizing the protruding structure, wherein the oxidizing of the protruding structure forms a nanowire interconnect inside the protruding structure, the protruding structure being oxidized by performing a self-ending anodic oxidation on the substrate having the protruding structure,
the nanowire interconnect (i) being substantially surrounded by a dielectric layer formed by the anodic oxidation, the forming of the dielectric layer reaching a termination point without external interference, and (ii) traversing between the first connection region and the second connection region.