US 9,812,394 B2
Faceted structure formed by self-limiting etch
Kangguo Cheng, Schenectady, NY (US); Ali Khakifirooz, Los Altos, CA (US); Juntao Li, Cohoes, NY (US); and Werner A Rausch, Stormville, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Oct. 12, 2015, as Appl. No. 14/880,438.
Prior Publication US 2017/0103947 A1, Apr. 13, 2017
Int. Cl. H01L 27/11 (2006.01); H01L 23/525 (2006.01); H01L 27/06 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 23/5256 (2013.01) [H01L 21/823431 (2013.01); H01L 27/0617 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming an eFuse device on a substrate used for an integrated circuit, comprising:
patterning a semiconductor structure from a semiconductor layer deposited over the substrate;
patterning a mask layer over the semiconductor structure such that a first region of the semiconductor structure is exposed and a second region of the semiconductor structure is protected by the mask layer, wherein the first region is surrounded by the second region;
forming a link structure of the eFuse device using a self-limiting etch on exposed areas in the first region of the semiconductor structure, wherein the link structure after the self-limiting etch is a first faceted semiconductor structure in the first region, having a first minimum, nonzero thickness at a point where two semiconductor facet planes meet thinner than a second thickness of semiconductor in the second region of the semiconductor structure protected by the mask;
forming an anode and a cathode of the eFuse device in the second region of the semiconductor structure, the anode, the link structure and cathode being arranged in a plane parallel to the surface of the substrate; and
converting the link structure into a first faceted metal semiconductor structure using a silicide process.