US 9,812,393 B2
Programmable via devices with metal/semiconductor via links and fabrication methods thereof
Ajey P. Jacob, Watervliet, NY (US); Suraj K. Patil, Ballston Lake, NY (US); and Min-hwa Chi, Malta, NY (US)
Assigned to GLOBALFOUNDRIES Inc., Grand Cayman (KY)
Filed by GLOBALFOUNDRIES Inc., Grand Cayman (KY)
Filed on Sep. 28, 2015, as Appl. No. 14/867,341.
Prior Publication US 2017/0092583 A1, Mar. 30, 2017
Int. Cl. H01L 23/52 (2006.01); H01L 23/525 (2006.01); H01L 23/522 (2006.01)
CPC H01L 23/5256 (2013.01) [H01L 23/5226 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A structure comprising:
a programmable via device, the programmable via device comprising:
a first metal layer and a second metal layer electrically connected by a via link, the via link comprising:
a first semiconductor portion contacting the first metal layer;
a second semiconductor portion contacting the second metal layer;
a metal portion positioned between the first semiconductor portion and the second semiconductor portion;
a first gap region positioned between the first semiconductor portion and a bottom surface of the metal portion; and
a second gap region positioned between the second semiconductor portion and a top portion of the metal portion;
wherein the via link facilitates programming of the programmable via device by applying a programming current through the via link to migrate materials between the semiconductor portion and the metal portion to facilitate a change of an electrical resistance of the via link.