US 9,812,387 B2
Semiconductor substrate, semiconductor module and method for manufacturing the same
Li-Chuan Tsai, Kaohsiung (TW); and Chih-Cheng Lee, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaosiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Nov. 29, 2016, as Appl. No. 15/364,143.
Application 15/364,143 is a continuation of application No. 14/798,384, filed on Jul. 13, 2015, granted, now 9,549,468.
Prior Publication US 2017/0077023 A1, Mar. 16, 2017
Int. Cl. H05K 1/11 (2006.01); H05K 1/03 (2006.01); H05K 1/16 (2006.01); H05K 7/00 (2006.01); H05K 1/18 (2006.01); H01L 23/498 (2006.01); H05K 1/02 (2006.01); H05K 3/36 (2006.01); H05K 3/00 (2006.01); H05K 3/22 (2006.01); H05K 3/40 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/49838 (2013.01) [H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H05K 1/0298 (2013.01); H05K 1/111 (2013.01); H05K 1/115 (2013.01); H05K 1/181 (2013.01); H05K 1/183 (2013.01); H05K 3/0017 (2013.01); H05K 3/22 (2013.01); H05K 3/36 (2013.01); H05K 3/40 (2013.01); H01L 24/17 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/19105 (2013.01); H05K 2201/0158 (2013.01); H05K 2201/10204 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor substrate, comprising:
a first dielectric structure having a first surface and a second surface opposite the first surface;
a second dielectric structure having a third surface and a fourth surface opposite the third surface, wherein the fourth surface faces the first surface, the second dielectric structure defining a through hole extending from the third surface to the fourth surface, wherein a cavity is defined by the through hole and the first dielectric structure;
a first patterned conductive layer, disposed on the first surface of the first dielectric structure; and
a second patterned conductive layer, disposed on and contacting the second surface of the first dielectric structure and including at least one conductive trace;
wherein the first dielectric structure defines at least one opening to expose a portion of the second patterned conductive layer.