US 9,812,380 B2
Bumps bonds formed as metal line interconnects in a semiconductor device
Greg Dix, Tempe, AZ (US); Roger Melcher, Gilbert, AZ (US); and Harold Kline, Phoenix, AZ (US)
Assigned to MICROCHIP TECHNOLOGY INCORPORATED, Chandler, AZ (US)
Filed by Microchip Technology Incorporated, Chandler, AZ (US)
Filed on Mar. 30, 2015, as Appl. No. 14/673,347.
Claims priority of provisional application 62/002,164, filed on May 22, 2014.
Prior Publication US 2016/0013121 A1, Jan. 14, 2016
Int. Cl. H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/482 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/49513 (2013.01) [H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/4824 (2013.01); H01L 23/4951 (2013.01); H01L 23/49541 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 23/528 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/1319 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13028 (2013.01); H01L 2224/14133 (2013.01); H01L 2224/1613 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/48245 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/19107 (2013.01)] 26 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
an array of conductive contact elements;
a passivation layer formed over the plurality of conductive contact elements, the passivation layer comprising passivation openings over a plurality of the conductive contact elements;
an array of conductive bumps including one or more interconnection bumps, wherein each interconnection bump is formed over the passivation layer and extends into at least two of the passivation openings and into contact with at least two underlying conductive contact elements to thereby provide a conductive coupling between the at least two underlying conductive contact elements;
a frontside drain connection;
a frontside source connection within a same cell of source metal as the frontside drain connection; and
only a single metal interconnect layer, which includes the array of conductive contact elements;
wherein the frontside source connection and the frontside drain connection are covered by a same conductive bump.