US 9,812,376 B2
Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device
Stefan Woehlert, Villach (AT); Michael Nelhiebel, Villach (AT); and Siegfried Roehl, Sauerlach (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jun. 29, 2015, as Appl. No. 14/753,797.
Claims priority of application No. 10 2014 109 489 (DE), filed on Jul. 8, 2014.
Prior Publication US 2016/0013117 A1, Jan. 14, 2016
Int. Cl. H01L 23/34 (2006.01); H01L 23/427 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 23/427 (2013.01) [H01L 21/4871 (2013.01); H01L 21/76838 (2013.01); H01L 23/4275 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 2924/0002 (2013.01)] 14 Claims
OG exemplary drawing
1. A power semiconductor device, comprising:
a semiconductor body;
an active portion of the power semiconductor device formed in the semiconductor body; and
an electrically conductive element electrically coupled to the active portion in the semiconductor body, the electrically conductive element comprising:
an electrically conductive material; and
a plurality of inclusions of a phase change material, the phase change material having a phase transition temperature Tc between 150° C. and 400° C.,
wherein the inclusions are separated from each other and embedded in the electrically conductive material.