US 9,812,368 B2
Method to prevent lateral epitaxial growth in semiconductor devices
Balasubramanian Pranatharthiharan, Watervliet, NY (US); and Hui Zang, Guilderland, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US); and Global Foundries, Grand Cayman (KY)
Filed by International Business Machines Corporation, Armonk, NY (US); and GlobalFoundries, Inc., Georgetown, Grand Cayman (KY)
Filed on Oct. 8, 2016, as Appl. No. 15/289,158.
Application 15/289,158 is a continuation of application No. 14/960,380, filed on Dec. 5, 2015, granted, now 9,590,074.
Prior Publication US 2017/0162451 A1, Jun. 8, 2017
Int. Cl. H01L 21/8236 (2006.01); H01L 21/8238 (2006.01); H01L 27/11 (2006.01); H01L 29/78 (2006.01); H01L 21/304 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/823878 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 21/3043 (2013.01); H01L 29/6656 (2013.01); H01L 29/785 (2013.01)] 9 Claims
OG exemplary drawing
1. A method for preventing epitaxial growth in a semiconductor device comprising:
cutting a set of long fins into a set of fins of a FinFET structure, the set of fins having respective cut faces of a set of cut faces located at respective fin ends of a set of fin ends;
patterning a photoresist layer over the set of fin ends of the set of fins of the FinFET structure, wherein the set of fins are isolated from one another by a first dielectric material, wherein a photoresist pattern over the set of fin ends differs from a photoresist pattern over other areas of the FinFET structure; and
forming a set of dielectric blocks on the set of fin ends covering respective cut faces of the set of cut faces; and
wherein the set of dielectric blocks prevents epitaxial growth at the cut faces of the set of fin ends in a subsequent epitaxial growth step.