US 9,812,363 B1
FinFET device and method of forming same
Chih-Teng Liao, Hsin-Chu (TW); Chih-Shan Chen, New Taipei (TW); Yi-Wei Chiu, Kaohsiung (TW); Ying Ting Hsia, Kaohsiung (TW); and Tzu-Chan Weng, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Feb. 17, 2017, as Appl. No. 15/436,568.
Claims priority of provisional application 62/427,571, filed on Nov. 29, 2016.
Int. Cl. H01L 21/8232 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01)
CPC H01L 21/823418 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01); H01L 27/0886 (2013.01); H01L 29/41783 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a fin over a substrate;
forming an isolation region adjacent the fin;
forming a dummy gate structure over the fin;
recessing the fin adjacent the dummy gate structure to form a first recess, the first recess having a U-shaped bottom surface, the U-shaped bottom surface being below a top surface of the isolation region;
reshaping the first recess to form a reshaped first recess, the reshaped first recess having a V-shaped bottom surface, at least a portion of the V-shaped bottom surface comprising one or more steps; and
epitaxially growing a source/drain region in the reshaped first recess.
 
17. A device comprising:
a fin over a substrate;
an isolation region adjacent the fin;
a gate structure along sidewalls and over a top surface of a channel region of the fin; and
an epitaxial region over the fin adjacent the gate structure, the epitaxial region having a V-shaped bottom surface, at least a portion of the V-shaped bottom surface having a stair-like pattern.