US 9,812,361 B2
Combination grinding after laser (GAL) and laser on-off function to increase die strength
Hartmut Buenning, Hamburg (DE); Sascha Moeller, Hamburg (DE); Guido Albermann, Hamburg (DE); Martin Lapke, Hamburg (DE); and Thomas Rohleder, Hamburg (DE)
Assigned to NXP B.V., Eindhoven (NL)
Filed by NXP B.V., Eindhoven (NL)
Filed on Mar. 11, 2014, as Appl. No. 14/204,858.
Claims priority of provisional application 61/876,470, filed on Sep. 11, 2013.
Prior Publication US 2015/0069578 A1, Mar. 12, 2015
Int. Cl. H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 21/784 (2006.01); H01L 21/268 (2006.01)
CPC H01L 21/78 (2013.01) [H01L 21/268 (2013.01); H01L 21/6835 (2013.01); H01L 21/784 (2013.01); H01L 21/6836 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68336 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) wafer substrate having a front-side and a back-side, the IC wafer substrate comprising:
active devices on the front-side, each having active device boundaries, the active device boundaries defining an active device area;
a plurality of secondary modification zones on the back-side of the wafer substrate, at a first focus depth and a second focus depth into the back-side, in saw lanes between active devices;
a main modification zone on the back-side of the wafer substrate, at a third focus depth into the back-side that is shallower than that of the first and second focus depths; and
wherein the secondary modification zones are located within the active device boundaries and configured to extend along less of the saw lanes and closer to the active devices relative to the main modification zone.