US 9,812,360 B2
Systems and methods for producing flat surfaces in interconnect structures
Cyprian Uzoh, San Jose, CA (US); Vage Oganesian, Palo Alto, CA (US); and Ilyas Mohammed, Santa Clara, CA (US)
Assigned to Tessera, Inc., San Jose, CA (US)
Filed by Tessera, Inc., San Jose, CA (US)
Filed on Dec. 27, 2016, as Appl. No. 15/391,393.
Application 14/199,181 is a division of application No. 13/168,839, filed on Jun. 24, 2011, granted, now 8,728,934, issued on May 20, 2014.
Application 15/391,393 is a continuation of application No. 15/066,238, filed on Mar. 10, 2016, granted, now 9,558,998.
Application 15/066,238 is a continuation of application No. 14/814,344, filed on Jul. 30, 2015, granted, now 9,318,385, issued on Apr. 19, 2016.
Application 14/814,344 is a continuation of application No. 14/199,181, filed on Mar. 6, 2014, granted, now 9,123,703, issued on Sep. 1, 2015.
Prior Publication US 2017/0110370 A1, Apr. 20, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/7684 (2013.01); H01L 21/76852 (2013.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01)] 23 Claims
OG exemplary drawing
1. A method for fabricating an apparatus comprising one or more semiconductor devices, the method comprising:
(a) obtaining a substrate comprising one or more holes in a top surface of the substrate, each said hole comprising at least one of a through-hole and a recess;
(b) obtaining a first structure comprising the substrate and also comprising a conductive layer of a first material, the conductive layer covering the substrate and extending into each said hole to provide in each said hole at least a part of an interconnect structure in the apparatus, a top surface of the conductive layer having a protrusion over each said hole, wherein over each said hole, the corresponding protrusion extends upward from an adjacent area of the top surface of the conductive layer, the adjacent area laterally surrounding a top of the protrusion; and
(c) polishing a top surface of the first structure at least until the top surface is planar and the conductive layer is completely removed adjacent each said hole.