US 9,812,357 B2
Self-limiting silicide in highly scaled fin technology
Kangguo Cheng, Schenectady, NY (US); Bruce B. Doris, Slingerlands, NY (US); Pouya Hashemi, White Plains, NY (US); Ali Khakifirooz, Los Altos, CA (US); and Alexander Reznicek, Troy, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Mar. 22, 2016, as Appl. No. 15/77,037.
Application 15/077,037 is a continuation of application No. 14/281,444, filed on May 19, 2014, granted, now 9,312,173.
Prior Publication US 2016/0204211 A1, Jul. 14, 2016
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/76889 (2013.01) [H01L 21/0257 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 21/2855 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 29/08 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/456 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of forming a metal semiconductor alloy on a fin structure comprising:
forming a semiconductor material layer of a polycrystalline crystal structure material or amorphous crystal structure material on a fin structure of a single crystal semiconductor material;
forming a metal including layer on the semiconductor material layer of the polycrystalline crystal structure material or the amorphous crystal structure material; and
intermixing metal elements from the metal including layer with the semiconductor material layer to provide a metal semiconductor alloy contact on the fin structure, wherein a core of the fin structure of the single crystal semiconductor material is substantially free of the metal elements from the metal including layer.