| US 9,812,354 B2 | ||
| Process of forming an electronic device including a material defining a void | ||
| Gordon M. Grivna, Mesa, AZ (US); Michael Thomason, Blackfoot, ID (US); and Stevan Gaurdello Hunter, Pocatello, ID (US) | ||
| Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US) | ||
| Filed by Semiconductor Components Industries, LLC, Phoenix, AZ (US) | ||
| Filed on May 15, 2015, as Appl. No. 14/713,603. | ||
| Prior Publication US 2016/0336184 A1, Nov. 17, 2016 | ||
| Int. Cl. H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 27/08 (2006.01); H01L 29/94 (2006.01) | ||
| CPC H01L 21/76831 (2013.01) [H01L 21/3083 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 21/76877 (2013.01); H01L 27/0805 (2013.01); H01L 29/945 (2013.01)] | 20 Claims |
| 1. A process of forming an electronic device comprising:
forming a masking layer over a substrate, wherein the masking layer defines a first opening including a first portion having
a first width and a second portion having a second width, wherein the first width is wider than the second width;
patterning the substrate to define a first trench having a first portion and a second portion corresponding to the first portion
and the second portion of the first opening of the masking layer, wherein, as compared to using a different mask having a
uniform width corresponding to the second width, during patterning, the first portion of the first trench allows an etchant
gas to reach a location at or near a bottom of the first trench more readily, and etch product gas to be removed from the
location at or near a bottom of the first trench more readily, or both; and
depositing a material within the first trench.
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