US 9,812,353 B2
Semiconductor device and method of manufacturing the same
Sang Hoon Ahn, Goyang-si (KR); Jong Min Baek, Seoul (KR); Myung Geun Song, Yongin-si (KR); Woo Kyung You, Incheon (KR); Byung Kwon Cho, Suwon-si (KR); Byung Hee Kim, Seoul (KR); and Na Ein Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 17, 2016, as Appl. No. 15/353,984.
Claims priority of application No. 10-2015-0171797 (KR), filed on Dec. 3, 2015; and application No. 10-2016-0015165 (KR), filed on Feb. 5, 2016.
Prior Publication US 2017/0162431 A1, Jun. 8, 2017
Int. Cl. H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 23/528 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32053 (2013.01); H01L 21/7685 (2013.01); H01L 23/528 (2013.01); H01L 21/76843 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming grooves in a first dielectric layer on a substrate, the first dielectric layer including a first part between the grooves;
forming a first barrier layer in each groove;
forming an interconnect layer on the first barrier layer to fill each groove;
recessing the interconnect layer and the first barrier layer;
forming a capping pattern on the recessed interconnect layer, the capping pattern being not formed on the first part;
etching at least a portion of the first part by a first etching process;
etching the at least a portion of the first part etched by the first etching process and the capping pattern, by a second etching process to form a trench;
conformally forming a second barrier layer on a sidewall and a bottom surface of the trench and on a top surface of the recessed interconnect layer; and
forming a second dielectric layer on the second barrier layer not to fill the trench such that an air gap is formed in the first part between the grooves.