US 9,812,352 B2
Semiconductor device and method for fabricating the same
Chich-Neng Chang, Pingtung County (TW); Ya-Jyuan Hung, Kaohsiung (TW); and Bin-Siang Tsai, Changhua County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jan. 31, 2016, as Appl. No. 15/11,629.
Claims priority of application No. 2016 1 0015488 (CN), filed on Jan. 11, 2016.
Prior Publication US 2017/0200632 A1, Jul. 13, 2017
Int. Cl. H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53295 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a dielectric layer on the substrate;
a stop layer between the dielectric layer and the substrate, wherein the stop layer contacts the substrate directly and the dielectric layer covers a top surface of the stop layer;
a metal layer in dielectric layer;
a void between the metal layer and the dielectric layer and exposes a top surface of the substrate, wherein none of a damaged layer of the dielectric layer is remained at between the dielectric layer and the void and the void comprises:
a first bottom surface aligned to the top surface of the substrate; and
a second bottom surface higher than the top surface of the substrate; and
a cap layer on and covering the dielectric layer, the void, and the metal layer.