US 9,812,351 B1
Interconnection cells having variable width metal lines and fully-self aligned continuity cuts
Nicholas Vincent Licausi, Watervliet, NY (US); Guillaume Bouche, Albany, NY (US); and Lars Wolfgang Liebmann, Mechanicville, NY (US)
Assigned to GLOBALFOUNDRIES Inc., Grand Cayman (KY)
Filed by GLOBALFOUNDRIES Inc., Grand Cayman (KY)
Filed on Dec. 15, 2016, as Appl. No. 15/379,645.
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76816 (2013.01) [H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H01L 23/53209 (2013.01); H01L 23/53228 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01)] 20 Claims
OG exemplary drawing
 
8. A method comprising:
patterning a 1st mandrel cell into a 1st mandrel layer disposed above a dielectric layer of a semiconductor structure, the 1st mandrel cell having at least one 1st mandrel, at least one 1st mandrel space and a 1st mandrel cell pitch;
patterning a 2nd mandrel cell into a 2nd mandrel layer disposed above the 1st mandrel layer, the 2nd mandrel cell having at least one 2nd mandrel, at least one 2nd mandrel space and a 2nd mandrel cell pitch; and
utilizing the 1st and 2nd mandrel cells to form a metal line cell into the dielectric layer, the metal line cell having metal lines, metal line spaces and a line cell pitch;
wherein the number of metal lines within the line cell are equal to the sum of the number of 1st mandrels within the 1st mandrel cell plus the number of 2nd mandrels within the 2nd mandrel cell when the metal lines of the metal line cell are an odd number; and
the number of metal lines within the line cell are equal to twice the sum of the number of 1st mandrels within the 1st mandrel cell plus the number of 2nd mandrels within the 2nd mandrel cell when the metal lines of the metal line cell are an even number.