US 9,812,350 B2
Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer
Julio C. Costa, Oak Ridge, NC (US)
Assigned to Qorvo US, Inc., Greensboro, NC (US)
Filed by RF Micro Devices, Inc., Greensboro, NC (US)
Filed on May 19, 2015, as Appl. No. 14/715,830.
Application 14/715,830 is a continuation in part of application No. 14/260,909, filed on Apr. 24, 2014, abandoned.
Application 14/260,909 is a continuation in part of application No. 13/852,648, filed on Mar. 28, 2013, abandoned.
Application 14/260,909 is a continuation in part of application No. 14/715,830.
Application 14/715,830 is a continuation in part of application No. 14/261,029, filed on Apr. 24, 2014, granted, now 9,214,337.
Application 14/261,029 is a continuation in part of application No. 13/852,648, filed on Mar. 28, 2013.
Application 14/261,029 is a continuation in part of application No. 14/715,830.
Application 14/715,830 is a continuation in part of application No. 14/529,870, filed on Oct. 31, 2014, granted, now 9,583,414.
Claims priority of provisional application 62/000,264, filed on May 19, 2014.
Claims priority of provisional application 61/815,327, filed on Apr. 24, 2013.
Claims priority of provisional application 61/816,207, filed on Apr. 26, 2013.
Claims priority of provisional application 61/773,490, filed on Mar. 6, 2013.
Claims priority of provisional application 61/898,009, filed on Oct. 31, 2013.
Prior Publication US 2015/0255368 A1, Sep. 10, 2015
Int. Cl. H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 23/29 (2006.01); H01L 23/36 (2006.01); H01L 23/373 (2006.01); H01L 29/786 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01)
CPC H01L 21/76251 (2013.01) [H01L 23/293 (2013.01); H01L 23/36 (2013.01); H01L 23/3737 (2013.01); H01L 27/1203 (2013.01); H01L 27/1266 (2013.01); H01L 29/78603 (2013.01); H01L 29/78606 (2013.01); H01L 21/568 (2013.01); H01L 23/3107 (2013.01); H01L 23/3192 (2013.01); H01L 2224/13 (2013.01); H01L 2224/13022 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacture for a semiconductor device comprising:
providing a device layer comprising at least a portion of a field effect device;
providing a buried oxide layer that has a first surface in direct contact with a wafer handle and a second surface under the device layer;
removing the wafer handle to expose the buried oxide layer;
disposing an interfacial adhesion layer onto the first surface of the buried oxide layer; and
molding a polymer substrate having a thermal conductivity that is greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity greater than 103 Ohm-cm directly onto the interfacial adhesion layer.