US 9,812,348 B2 | ||
Member peeling method, member processing method, and method for manufacturing semiconductor chip | ||
Shinya Nakajima, Chofu (JP); and Kazuta Saito, Tokyo (JP) | ||
Assigned to 3M INNOVATIVE PROPERTIES COMPANY, St. Paul, MN (US) | ||
Appl. No. 15/105,597 |
||
Filed by 3M INNOVATIVE PROPERTIES COMPANY, St. Paul, MN (US) | ||
PCT Filed Dec. 15, 2014, PCT No. PCT/US2014/070277 § 371(c)(1), (2) Date Jun. 17, 2016, PCT Pub. No. WO2015/095015, PCT Pub. Date Jun. 25, 2015. |
||
Claims priority of application No. 2013-264446 (JP), filed on Dec. 20, 2013. | ||
Prior Publication US 2016/0351431 A1, Dec. 1, 2016 | ||
Int. Cl. H01L 21/683 (2006.01); H01L 21/268 (2006.01) |
CPC H01L 21/6836 (2013.01) [H01L 21/268 (2013.01); H01L 21/6835 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2221/68386 (2013.01)] | 12 Claims |
1. A member peeling method, comprising:
a step for preparing a first member having a first main face and a second member having a second main face;
a step for disposing a photothermal conversion layer on at least a portion of an outer edge of the first main face and the
photoconversion layer is not disposed on the entirety of the first main face of the first member;
a step for mutually joining the first main face and the second main face via an adhesive layer so that the photothermal conversion
layer is disposed between the first main face and the second main face;
a step for irradiating a laser light to the photothermal conversion layer;
a step for at least partially peeling the first member from the second member by applying a force to an outer peripheral portion
of either member of the first member or the second member in a direction away from the other member of the first member or
second member.
|