US 9,812,347 B2 | ||
Semiconductor device and method | ||
Sukianto Rusli, Phoenix, AZ (US) | ||
Assigned to CHIP SOLUTIONS, LLC, Phoenix, AZ (US) | ||
Filed by Chip Solutions, LLC, Phoenix, AZ (US) | ||
Filed on Jul. 15, 2016, as Appl. No. 15/211,631. | ||
Claims priority of provisional application 62/231,814, filed on Jul. 15, 2015. | ||
Claims priority of provisional application 62/388,023, filed on Jan. 14, 2016. | ||
Prior Publication US 2017/0018526 A1, Jan. 19, 2017 | ||
Int. Cl. H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01) |
CPC H01L 21/6835 (2013.01) [H01L 21/486 (2013.01); H01L 21/4846 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/3107 (2013.01); H01L 23/3121 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 24/82 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/0801 (2013.01); H01L 2224/08501 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/81455 (2013.01); H01L 2224/821 (2013.01); H01L 2224/82896 (2013.01); H01L 2924/15747 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a semiconductor die;
a substrate including a first surface and a second surface, the substrate comprising a conductive circuit and an insulative
material over the conductive circuit, wherein the semiconductor die is attached to the second surface; and
an interconnect joint structure in the substrate creating a capture pad including a middle copper layer, an adjacent top nickel
layer, and an adjacent bottom nickel layer.
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