US 9,812,345 B2
Composite substrate, semiconductor device, and method for manufacturing semiconductor device
Akiyoshi Ide, Kasugai (JP); Tatsuro Takagaki, Nagoya (JP); Sugio Miyazawa, Kasugai (JP); Yuji Hori, Owariasahi (JP); Tomoyoshi Tai, Inazawa (JP); and Ryosuke Hattori, Ichinomiya (JP)
Assigned to NGK INSULATORS, LTD., Aichi (JP)
Filed by NGK INSULATORS, LTD., Aichi (JP)
Filed on Aug. 13, 2015, as Appl. No. 14/825,715.
Application 14/825,715 is a continuation of application No. PCT/JP2014/053689, filed on Feb. 18, 2014.
Claims priority of application No. 2013-030161 (JP), filed on Feb. 19, 2013.
Prior Publication US 2015/0380290 A1, Dec. 31, 2015
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/683 (2006.01); B32B 38/10 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 7/02 (2006.01); H03H 9/25 (2006.01); H03H 3/10 (2006.01); B32B 7/06 (2006.01); B32B 18/00 (2006.01); H01L 21/78 (2006.01); B32B 7/12 (2006.01); B32B 27/08 (2006.01); B32B 27/20 (2006.01); B32B 27/28 (2006.01); H01L 41/187 (2006.01); H03H 9/02 (2006.01); B32B 37/10 (2006.01); H03H 3/08 (2006.01)
CPC H01L 21/6835 (2013.01) [B32B 7/02 (2013.01); B32B 7/06 (2013.01); B32B 7/12 (2013.01); B32B 9/005 (2013.01); B32B 9/04 (2013.01); B32B 18/00 (2013.01); B32B 27/08 (2013.01); B32B 27/20 (2013.01); B32B 27/283 (2013.01); B32B 38/10 (2013.01); H01L 21/78 (2013.01); H03H 3/10 (2013.01); H03H 9/25 (2013.01); B32B 37/10 (2013.01); B32B 2264/105 (2013.01); B32B 2307/20 (2013.01); B32B 2307/206 (2013.01); B32B 2307/538 (2013.01); B32B 2309/02 (2013.01); B32B 2309/105 (2013.01); B32B 2457/00 (2013.01); B32B 2457/14 (2013.01); H01L 41/1873 (2013.01); H03H 3/08 (2013.01); H03H 9/02574 (2013.01); Y10T 428/12597 (2015.01)] 7 Claims
OG exemplary drawing
 
1. A composite substrate including a semiconductor substrate and an insulating support substrate that are laminated together,
wherein the support substrate includes first and second substrates made of the same insulating material and bonded together with a strength that allows the first and second substrates to be separated from each other with a blade, and the semiconductor substrate is laminated on a surface of the first substrate opposite a surface thereof bonded to the second substrate.