US 9,812,341 B2
Rare-earth oxide based coatings based on ion assisted deposition
Jennifer Y. Sun, Mountain View, CA (US); Biraja P. Kanungo, San Jose, CA (US); Vahid Firouzdor, San Mateo, CA (US); and Ying Zhang, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 23, 2017, as Appl. No. 15/413,192.
Application 15/413,192 is a continuation of application No. 14/034,315, filed on Sep. 23, 2013, granted, now 9,583,369.
Claims priority of provisional application 61/856,696, filed on Jul. 20, 2013.
Prior Publication US 2017/0133207 A1, May 11, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/67 (2006.01); B65D 43/02 (2006.01); H01J 37/32 (2006.01); C23C 14/00 (2006.01); C23C 14/08 (2006.01)
CPC H01L 21/67023 (2013.01) [B65D 43/02 (2013.01); C23C 14/0015 (2013.01); C23C 14/0031 (2013.01); C23C 14/08 (2013.01); H01J 37/32477 (2013.01); H01J 37/32495 (2013.01); H01J 37/32513 (2013.01); H01L 21/6708 (2013.01); H01L 21/67063 (2013.01); H01L 21/67069 (2013.01); H01L 21/67086 (2013.01); H01J 2237/334 (2013.01); Y10T 428/1317 (2015.01); Y10T 428/1393 (2015.01)] 20 Claims
OG exemplary drawing
 
1. A component for a semiconductor processing chamber, comprising:
a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches; and
a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.