US 9,812,338 B2
Encapsulation of advanced devices using novel PECVD and ALD schemes
Zoltan Ring, Chapel Hill, NC (US); Helmut Hagleitner, Zebulon, NC (US); and Daniel Namishia, Wake Forest, NC (US)
Assigned to Cree, Inc., Durham, NC (US)
Filed by Cree, Inc., Durham, NC (US)
Filed on Mar. 14, 2013, as Appl. No. 13/804,126.
Prior Publication US 2014/0264960 A1, Sep. 18, 2014
Int. Cl. H01L 25/04 (2014.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/56 (2013.01) [H01L 23/3135 (2013.01); H01L 23/3192 (2013.01); H01L 2924/0002 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor die comprising:
a semiconductor body;
a passivation structure on the semiconductor body; and
a multi-layer environmental barrier on the passivation structure, the multi-layer environmental barrier comprising three layers of different materials, wherein the multi-layer environmental barrier has a repeating structure and there are at least two repeating structures.
 
10. A method comprising:
providing a semiconductor body;
providing a passivation structure on the semiconductor body; and
providing a multi-layer environmental barrier on the passivation structure, the multi-layer environmental barrier comprising three layers of different materials, wherein the multi-layer environmental barrier has a repeating structure and there are at least two repeating structures.