US 9,812,333 B2
Nanoscale patterning method and integrated device for electronic apparatus manufactured therefrom
Sang Ouk Kim, Daejeon (KR); and Hyoung-Seok Moon, Daejeon (KR)
Assigned to Korea Advanced Institute of Science and Technology, Daejeon (KR); and Institute for Basic Science, Daejeon (KR)
Filed by KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR); and INSTITUTE FOR BASIC SCIENCE, Daejeon (KR)
Filed on Dec. 26, 2014, as Appl. No. 14/583,492.
Claims priority of application No. 10-2013-0163898 (KR), filed on Dec. 26, 2013.
Prior Publication US 2015/0187602 A1, Jul. 2, 2015
Int. Cl. H01L 21/308 (2006.01); B81C 1/00 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/3086 (2013.01) [B81C 1/00031 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01); H01L 21/02178 (2013.01); Y10T 428/24802 (2015.01)] 8 Claims
OG exemplary drawing
 
1. A nanoscale patterning method using self-assembly, comprising:
a) a step of depositing an organic photoresist layer on a surface of a substrate to form the organic photoresist layer directly contacted with the substrate, and forming organic photoresist patterns on the substrate by using lithography;
b) a step of forming a block copolymer thin film including two or more kinds of domain blocks on the substrate including the organic photoresist patterns formed thereon;
c) a step of selectively removing any one domain block from the block copolymer thin film;
d) a step of forming an inorganic spacer layer on a surface of the block copolymer thin film of the step c); and
e) a step of removing the remaining block copolymer thin film of the step d) and the organic photoresist patterns,
wherein the block copolymer is obtained by polymerizing at least one hydrophilic domain block and at least one hydrophobic domain block, and
wherein when it is assumed that a molecular weight of the entire block copolymer is 100, a molecular weight ratio of each domain block is 20 to 80 (hydrophilic domain block):80 to 20 (hydrophobic domain block).