US 9,812,332 B2
Etching methods and methods of manufacturing semiconductor devices using the same
Hyun-Kwan Yu, Suwon-si (KR); Woonki Shin, Seoul (KR); Moonhan Park, Yongin-si (KR); DongSuk Shin, Yongin-si (KR); and HanJin Lim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 5, 2017, as Appl. No. 15/398,776.
Claims priority of application No. 10-2016-0000996 (KR), filed on Jan. 5, 2016.
Prior Publication US 2017/0194158 A1, Jul. 6, 2017
Int. Cl. H01L 21/461 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 21/30604 (2013.01) [H01L 21/02057 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
providing a first structure comprising a recess region on a substrate, the recess region including an inner part and a mouth part whose width is less than that of the inner part in a cross-sectional view; and
performing a clean-then-etch process to remove at least a portion of etching object formed outside the recess region, the performing the clean-then-etch process comprising:
performing a cleaning process filling at least a portion of the recess region with a cleaning solution; and
performing a wet etch process to the substrate in a state that the cleaning solution remains in the recess region.