| US 9,812,329 B2 | ||
| Method of fabricating a semiconductor device | ||
| Won Woong Chung, Suwon-si (KR); Youn Joung Cho, Hwaseong-si (KR); and Jung Sik Choi, Seongnam-si (KR) | ||
| Assigned to SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do (KR) | ||
| Filed by Samsung Electronics Co., Ltd., Suwon-si (KR) | ||
| Filed on Oct. 12, 2016, as Appl. No. 15/291,268. | ||
| Claims priority of application No. 10-2015-0175567 (KR), filed on Dec. 10, 2015. | ||
| Prior Publication US 2017/0170023 A1, Jun. 15, 2017 | ||
| Int. Cl. H01L 21/285 (2006.01); H01L 21/786 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01) | ||
| CPC H01L 21/28518 (2013.01) [H01L 21/76895 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01)] | 20 Claims |
| 1. A method of fabricating a semiconductor device comprising:
providing an exposed silicon region;
forming a rare earth metal silicide film on the exposed silicon region by simultaneously supplying a rare earth metal and
a silicon to the exposed silicon region using physical vapor deposition, the rare earth metal silicide film contacting the
exposed silicon region; and
forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region.
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