| US 9,812,326 B2 | ||
| Semiconductor device, related manufacturing method, and related electronic device | ||
| Guoan Liu, Shanghai (CN); and Wei Xu, Shanghai (CN) | ||
| Assigned to SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, (CN) | ||
| Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN) | ||
| Filed on Jan. 6, 2016, as Appl. No. 14/989,169. | ||
| Claims priority of application No. 2015 1 0019320 (CN), filed on Jan. 14, 2015. | ||
| Prior Publication US 2016/0204050 A1, Jul. 14, 2016 | ||
| Int. Cl. H01L 21/18 (2006.01); B81C 1/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/48 (2006.01) | ||
| CPC H01L 21/187 (2013.01) [B81C 1/00 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/481 (2013.01); H01L 2224/13 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01)] | 10 Claims |
| 1. A method for manufacturing a semiconductor device, the method comprising:
preparing a first substrate;
providing a first conductor, which is configured to electrically connect two elements associated with the first substrate;
providing a second conductor on the first substrate, wherein the second conductor is electrically connected to the first conductor,
wherein the second conductor is narrower than the first conductor in a direction parallel to the first substrate;
preparing a second substrate;
providing a third conductor, which is configured to electrically connect two elements associated with the second substrate;
providing a fourth conductor on the second substrate, wherein the fourth conductor is electrically connected to the third
conductor;
providing a fifth conductor on the fourth conductor; and
combining the fifth conductor with the second conductor through a eutectic bonding process.
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