US 9,812,326 B2
Semiconductor device, related manufacturing method, and related electronic device
Guoan Liu, Shanghai (CN); and Wei Xu, Shanghai (CN)
Assigned to SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, (CN)
Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN)
Filed on Jan. 6, 2016, as Appl. No. 14/989,169.
Claims priority of application No. 2015 1 0019320 (CN), filed on Jan. 14, 2015.
Prior Publication US 2016/0204050 A1, Jul. 14, 2016
Int. Cl. H01L 21/18 (2006.01); B81C 1/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/48 (2006.01)
CPC H01L 21/187 (2013.01) [B81C 1/00 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/481 (2013.01); H01L 2224/13 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, the method comprising:
preparing a first substrate;
providing a first conductor, which is configured to electrically connect two elements associated with the first substrate;
providing a second conductor on the first substrate, wherein the second conductor is electrically connected to the first conductor, wherein the second conductor is narrower than the first conductor in a direction parallel to the first substrate;
preparing a second substrate;
providing a third conductor, which is configured to electrically connect two elements associated with the second substrate;
providing a fourth conductor on the second substrate, wherein the fourth conductor is electrically connected to the third conductor;
providing a fifth conductor on the fourth conductor; and
combining the fifth conductor with the second conductor through a eutectic bonding process.