providing a semiconductor structure having a substrate, the substrate including a plurality of substantially parallel fins;

determining a target layout pattern overlaying active areas for a device train of devices to be disposed on the fins, the devices terminating in fin tips of the fins, the target layout pattern including a first group of sections overlaying devices having more fins than any adjacent device and a second group of sections overlaying devices having less fins than any adjacent device;

patterning a first extended exposure actual pattern into the structure, the first extended exposure actual pattern including extensions that extend sections of the first group toward adjacent sections of the first group;

patterning a second extended exposure actual pattern into the structure, the second extended exposure actual pattern including extensions that extend sections of the second group toward adjacent sections of the second group;

combining portions of the first and second extended exposure actual patterns to form a final pattern overlaying the same active areas as the target pattern; and

wherein the first group of sections overlays a commencement device located at a beginning of the device train and a termination device located at an end of the device train.