US 9,812,324 B1
Methods to control fin tip placement
Lei Zhuang, Ridgefield, CT (US); Lars Liebmann, Mechanicville, NY (US); Stuart A. Sieg, Albany, NY (US); Fee Li Lie, Albany, NY (US); Mahender Kumar, Fishkill, NY (US); Shreesh Narasimha, Beacon, NY (US); Ahmed Hassan, Clifton Park, NY (US); Guillaume Bouche, Albany, NY (US); and Xintuo Dai, Clifton Park, NY (US)
Assigned to GLOBALFOUNDRIES Inc., Grand Cayman (KY)
Filed by GLOBALFOUNDRIES Inc., Grand Cayman (KY)
Filed on Jan. 13, 2017, as Appl. No. 15/405,789.
Int. Cl. H01L 21/02 (2006.01); H01L 21/76 (2006.01); H01L 21/30 (2006.01); H01L 21/027 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/0273 (2013.01) [H01L 27/0207 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 21/28123 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method comprising:
providing a semiconductor structure having a substrate, the substrate including a plurality of substantially parallel fins;
determining a target layout pattern overlaying active areas for a device train of devices to be disposed on the fins, the devices terminating in fin tips of the fins, the target layout pattern including a first group of sections overlaying devices having more fins than any adjacent device and a second group of sections overlaying devices having less fins than any adjacent device;
patterning a first extended exposure actual pattern into the structure, the first extended exposure actual pattern including extensions that extend sections of the first group toward adjacent sections of the first group;
patterning a second extended exposure actual pattern into the structure, the second extended exposure actual pattern including extensions that extend sections of the second group toward adjacent sections of the second group;
combining portions of the first and second extended exposure actual patterns to form a final pattern overlaying the same active areas as the target pattern; and
wherein the first group of sections overlays a commencement device located at a beginning of the device train and a termination device located at an end of the device train.