US 9,812,322 B2
Sapphire substrate with patterned structure
Kung-Hsieh Hsu, Tainan (TW); Cheng-Yu Chiu, Taoyuan (TW); Ming-Sen Hsu, Tainan (TW); Chun-Hung Chen, Taoyuan (TW); and Chun-Yi Lee, Taoyuan (TW)
Assigned to Epileds Technologies, Inc., Tainan (TW)
Filed by Epileds Technologies, Inc., Tainan (TW); and Lucemitek Co., Ltd., Taoyuan (TW)
Filed on Aug. 26, 2015, as Appl. No. 14/836,679.
Prior Publication US 2017/0062655 A1, Mar. 2, 2017
Int. Cl. H01L 33/12 (2010.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); H01L 33/00 (2010.01)
CPC H01L 21/0254 (2013.01) [C30B 25/18 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 33/007 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A sapphire substrate with patterned structure, comprising:
a sapphire base with a surface and a plurality of recessed cavities formed on the surface thereof; and
a template layer disposed on the sapphire base;
wherein the plurality of the cavities are periodically arranged at a predetermined distance from each other, and each of the plurality of the cavities has a bottom surface and a top opening;
wherein each of the plurality of the cavities comprises at least a first and a second inclined surfaces, and the first and the second inclined surfaces are inclined by a first and a second angles respectively with respect to the bottom surface of the plurality of the cavities;
wherein a non-recessed portion of the surface of the sapphire base has a width between edges of the top opening of each of the plurality of the cavities in a range between 0.001 and 1 μm;
wherein the template layer is disposed on the non-recessed portion of the surface of the sapphire base, and a surface roughness of the template layer is in a range between 0.001 and 0.5 μm, and
wherein a material of the template layer is selected from a group consisting of aluminum nitride (AlN), aluminium gallium nitride (AlGaN), and aluminum gallium indium nitride (AlGaInN).