US 9,812,320 B1
Method and apparatus for filling a gap
Viljami Pore, Helsinki (FI); Werner Knaepen, Leuven (BE); Bert Jongbloed, Oud-Heverlee (BE); Dieter Pierreux, Dilbeek (BE); Steven R. A. Van Aerde, Tielt-Winge (BE); Suvi Haukka, Helsinki (FI); Atsuki Fukuzawa, Tama (JP); and Hideaki Fukuda, Hachioji (JP)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 28, 2016, as Appl. No. 15/222,738.
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/762 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/45525 (2013.01); C23C 16/50 (2013.01); H01J 37/32009 (2013.01); H01L 21/02274 (2013.01); H01L 21/76224 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01)] 38 Claims
OG exemplary drawing
 
1. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising:
introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant;
introducing a second reactant to the substrate with a second dose, wherein the first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps; and
introducing a third reactant to the substrate with a third dose, the third reactant reacting with at least one of the first and second reactant, wherein the second reactant is a relatively high growth rate reactant in reaction with the third reactant.