US 9,812,319 B1
Method for forming film filled in trench without seam or void
Atsuki Fukazawa, Tama (JP); and Hideaki Fukuda, Portland, OR (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 6, 2016, as Appl. No. 15/203,632.
Int. Cl. H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/45525 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/02326 (2013.01); H01L 21/02348 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for forming a film filled in a trench of a substrate without seam or void, comprising:
(i) depositing a conformal SiN film as a layer in a trench of a substrate placed in a reaction space, using a halide compound as a precursor;
(ii) repeating step (i) until the trench is filled with accumulated layers of the conformal SiN film and a top opening of the trench is closed by the accumulated layers, which accumulated layers form a filled film which has a seam and/or void, said filled film referring to a filler filling the trench and formed of the accumulated layers, said seam referring to a longitudinal line observed on a cross section of the filler, said void referring to a closed vacant space observed on a cross section of the filler;
(iii) after step (ii), oxidizing the filled film without deposition of film to make the filled film expand; and
(iv) continuing step (iii) until the seam and/or void of the filled film are/is diminished.