| US 9,812,318 B2 | ||
| Low temperature molecular layer deposition of SiCON | ||
| Mark Saly, Santa Clara, CA (US); David Thompson, San Jose, CA (US); and Lakmal Kalutarage, San Jose, CA (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, CA (US) | ||
| Filed by Applied Materials, Inc., Santa Clara, CA (US) | ||
| Filed on Jul. 16, 2015, as Appl. No. 14/801,215. | ||
| Claims priority of provisional application 62/029,479, filed on Jul. 26, 2014. | ||
| Prior Publication US 2016/0024647 A1, Jan. 28, 2016 | ||
| Int. Cl. C23C 16/30 (2006.01); H01L 21/02 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01) | ||
| CPC H01L 21/0228 (2013.01) [C23C 16/30 (2013.01); C23C 16/45531 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01)] | 20 Claims |
| 1. A method of depositing a film, the method comprising:
exposing at least a portion of a substrate surface to a first precursor comprising a multi-functional amine to form an amine-containing
film on the substrate surface; and
exposing the amine-containing film to a second precursor comprising at least one silicon atom and at least one reactive moiety
to form an SiCON film on at least a portion of the substrate surface, the second precursor comprising a compound having the
formula
 where n is in the range of about 0 to about 6, y is in the range of about 1 to about 3 and R is selected from the group consisting
of hydrogen, alkyl groups, amino groups and combinations thereof.
|