US 9,812,318 B2
Low temperature molecular layer deposition of SiCON
Mark Saly, Santa Clara, CA (US); David Thompson, San Jose, CA (US); and Lakmal Kalutarage, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 16, 2015, as Appl. No. 14/801,215.
Claims priority of provisional application 62/029,479, filed on Jul. 26, 2014.
Prior Publication US 2016/0024647 A1, Jan. 28, 2016
Int. Cl. C23C 16/30 (2006.01); H01L 21/02 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/30 (2013.01); C23C 16/45531 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of depositing a film, the method comprising:
exposing at least a portion of a substrate surface to a first precursor comprising a multi-functional amine to form an amine-containing film on the substrate surface; and
exposing the amine-containing film to a second precursor comprising at least one silicon atom and at least one reactive moiety to form an SiCON film on at least a portion of the substrate surface, the second precursor comprising a compound having the formula

OG Complex Work Unit Drawing
where n is in the range of about 0 to about 6, y is in the range of about 1 to about 3 and R is selected from the group consisting of hydrogen, alkyl groups, amino groups and combinations thereof.