US 9,812,305 B2
Rate enhanced pulsed DC sputtering system
Douglas Pelleymounter, Northfield, MN (US)
Assigned to Advanced Energy Industries, Inc., Fort Collins, CO (US)
Filed by Advanced Energy Industries, Inc., Fort Collins, CO (US)
Filed on Apr. 27, 2015, as Appl. No. 14/697,267.
Prior Publication US 2016/0314946 A1, Oct. 27, 2016
Int. Cl. C23C 14/00 (2006.01); H01J 37/34 (2006.01); C23C 14/35 (2006.01); C23C 14/34 (2006.01)
CPC H01J 37/3476 (2013.01) [C23C 14/3485 (2013.01); C23C 14/35 (2013.01); H01J 37/3405 (2013.01); H01J 37/3438 (2013.01); H01J 37/3444 (2013.01); H01J 37/3467 (2013.01); H01J 2237/2485 (2013.01); H01J 2237/327 (2013.01); H01J 2237/332 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A pulsed direct current sputtering system, comprising:
a plasma chamber enclosing a first magnetron coupled to a first target, a second magnetron coupled to a second target, and an anode;
a first power source coupled to the first magnetron and the anode, the first power source configured to provide a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron;
a second power source coupled to the second magnetron and the anode, the second power source configured to provide a cyclic second-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the second magnetron; and
a controller configured to phase-synchronize and control a duty of the first-power-source voltage and second-power-source voltage to apply a bipolar anode voltage to the anode that is a combination of the cyclic first-power-source voltage and the cyclic second-power source voltage, and to phase-synchronize a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and second magnetron voltage; and wherein
the controller comprises a field programmable gate array, and a non-transitory memory including non-transitory instructions accessible by the field programmable gate array to configure the field programmable gate array to:
cause the first power source to apply a first sputtering power having a first voltage and a first current to the first magnetron for a first period of time;
cause the second power source to apply a second sputtering power having a second voltage and a second current to the second magnetron for the first period of time;
cause the first power source to apply a first anode power to the anode for a second period of time following the first period of time; and
cause the second power source to apply a second anode power to the anode for the second period of time; and wherein
the first anode power and the second anode power result in a combined anode power having a combined current that is less than each of the first current and the second current.