US 9,812,302 B2
Magnetron sputtering apparatus
Tadahiro Ohmi, Sendai (JP); Tetsuya Goto, Sendai (JP); and Takaaki Matsuoka, Tokyo (JP)
Assigned to NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, Sendai-Shi, Miyagi (JP); and TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 12/531,515
Filed by Tadahiro Ohmi, Sendai (JP); Tetsuya Goto, Sendai (JP); and Takaaki Matsuoka, Tokyo (JP)
PCT Filed Mar. 14, 2008, PCT No. PCT/JP2008/054730
§ 371(c)(1), (2), (4) Date Sep. 16, 2009,
PCT Pub. No. WO2008/114718, PCT Pub. Date Sep. 25, 2008.
Claims priority of application No. 2007-067940 (JP), filed on Mar. 16, 2007; and application No. 2007-099778 (JP), filed on Apr. 5, 2007.
Prior Publication US 2010/0101945 A1, Apr. 29, 2010
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); H01J 37/34 (2006.01); C23C 14/35 (2006.01)
CPC H01J 37/3455 (2013.01) [C23C 14/35 (2013.01); H01J 37/32495 (2013.01); H01J 37/345 (2013.01); H01J 37/3405 (2013.01); H01J 37/3408 (2013.01); H01J 37/3441 (2013.01); H01J 37/3452 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A magnetron sputtering apparatus comprising a backing plate to which a target is held facing a substrate to be processed, and a magnet disposed on a back side of said target relative to said substrate, and adapted to confine plasma on a target surface by forming a magnetic field on the target surface using said magnet, wherein:
said magnet comprises a rotary magnet group having a plurality of plate magnets arranged on outer periphery of a columnar rotary shaft facing said plate magnets' surface to a radial direction of the columnar rotary shaft such that the plate magnets are bonded to a surface of the columnar rotary shaft so as to form a plurality of helices and a fixed outer circumferential frame magnet which is arranged in parallel with the target surface around said rotary magnet group and which is magnetized in a direction perpendicular to the target surface;
a magnetic field pattern on the target surface moves with time by rotating said rotary magnet group along with said columnar rotary shaft;
said magnetron sputtering apparatus comprises a shielding member disposed on an opposite side of said target with respect to said rotary magnet group so as to cover an end portion of said target and to be spaced apart from said target, said shielding member being electrically grounded, and said shielding member extends in a direction the same as an axial direction of said columnar rotary shaft and forms a slit opening said target to said substrate; and
said substrate is placed on a substrate placing stage and, while plasma is excited on the target surface by applying a DC power, a RF power, or a DC power and a RF power simultaneously to said target, said substrate is placed under the slit, and a distance between an upper surface of said substrate or said substrate placing stage and a lower surface of said shielding member is shorter than a mean free path of electrons in said plasma at a position of said shielding member and,
said substrate moves in parallel with the target surface and is placed at a retreated position of said substrate which is other than under the slit upon plasma ignition or extinction, and a distance in a vertical direction between the upper surface of said substrate or said substrate placing stage and the lower surface of said shielding member is shorter than a mean free path of electrons at a position of said shielding member, and a distance in a parallel direction between an end portion of said substrate at a side of the slit and an end portion of said shielding member at a side of the slit is longer than the mean free path of electrons at the position of said shielding member.