US 9,812,301 B2
	Tungsten sintered compact sputtering target and method for producing same
Kazumasa Ohashi, Ibaraki (JP); and Takeo Okabe, Ibaraki (JP)
Assigned to JX Nippon Mining & Metals Corporation, Tokyo (JP)
Appl. No. 14/654,568
Filed by JX Nippon Mining & Metals Corporation, Tokyo (JP)
PCT Filed Mar. 20, 2014, PCT No. PCT/JP2014/057646 § 371(c)(1), (2) Date Jun. 22, 2015, PCT Pub. No. WO2014/148588, PCT Pub. Date Sep. 25, 2014.
Claims priority of application No. 2013-060159 (JP), filed on Mar. 22, 2013.
Prior Publication US 2015/0357170 A1, Dec. 10, 2015
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01); C22C 27/04 (2006.01); C22C 1/04 (2006.01); C23C 14/16 (2006.01)

CPC H01J 37/3426 (2013.01) [C22C 27/04 (2013.01); C23C 14/3414 (2013.01); C22C 1/045 (2013.01); C23C 14/165 (2013.01)]

1 Claim

1. A tungsten sintered compact sputtering target consisting of tungsten, impurities excluding gas components, and gas components consisting of oxygen, carbon, hydrogen, nitrogen and sulfur, wherein the sputtering target has a sintered structure such that an average content of iron as an impurity in the sintered structure is in an amount of 0.4 to 0.8 wtppm, a content of iron varies from location to location within the sputtering target by an amount of ±0.1 wtppm about the average content of iron, and the sputtering target has a relative density of 99% or higher, an average crystal grain size of about 20-50 μm, a crystal grain size ranging from 5 to 200 pm, a concentration of impurities in total excluding gas components of about 1.001-1.013 wtppm, and a content for each of oxygen, carbon, hydrogen, nitrogen and sulfur of 50 wtppm or less, wherein oxygen and carbon are each between about 20-30 wtppm.