US 9,812,300 B2
Silicon target for sputtering film formation and method for forming silicon-containing thin film
Hiroki Yoshikawa, Niigata (JP); Yukio Inazuki, Niigata (JP); and Hideo Kaneko, Niigata (JP)
Assigned to Shin-Etsu Chemical Co., Ltd., Chiyoda-ku (JP)
Filed by Shin-Etsu Chemical Co., Ltd., Chiyoda-ku (JP)
Filed on Jun. 23, 2014, as Appl. No. 14/312,192.
Application 14/312,192 is a continuation of application No. 13/302,543, filed on Nov. 22, 2011, abandoned.
Claims priority of application No. 2010-271796 (JP), filed on Dec. 6, 2010.
Prior Publication US 2014/0318948 A1, Oct. 30, 2014
Int. Cl. H01J 37/34 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/14 (2006.01)
CPC H01J 37/3426 (2013.01) [C23C 14/0676 (2013.01); C23C 14/14 (2013.01); C23C 14/3407 (2013.01); C23C 14/3414 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for forming a silicon-containing thin film, comprising DC sputtering in a gas comprising nitrogen and argon with a target in which a silicon target material is attached to a metallic backing plate via a bonding material,
wherein:
said silicon target material is made of silicon whose conductive type is n-type,
a conductive layer having a thickness of 0.1 to 10 μm, and made of a material having a smaller work function than that of the silicon target material, is provided on a surface of the silicon target material on the bonding material side,
the conductive layer is provided directly on a surface of the bonding material, and
bonding surfaces of the conductive layer and the n-type silicon target material are in ohmic contact.