US 9,812,298 B2
Cleaning device and cleaning process for a plasma reactor
Jacques Henri Pelletier, Saint Martin d'Heres (FR); Ana Lacoste, Saint Martin le Vinoux (FR); Alexandre Bes, Vourey (FR); Stephane Jean Louis Bechu, Chantesse (FR); and Jerome Sirou, Grenoble (FR)
Assigned to CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), Paris (FR); and UNIVERSITE JOSEPH FOURIER—GRENOBLE 1, St. Martin d'Heres (FR)
Filed by CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), Paris (FR); and Universite Joseph Fourier—Grenoble 1, St. Martin d'Heres (FR)
Filed on Jun. 24, 2014, as Appl. No. 14/313,200.
Application 14/313,200 is a division of application No. 12/308,296, abandoned, previously published as PCT/EP2007/055830, filed on Jun. 13, 2007.
Prior Publication US 2014/0305467 A1, Oct. 16, 2014
Int. Cl. H01J 37/32 (2006.01); H01L 21/67 (2006.01); C23C 16/44 (2006.01)
CPC H01J 37/32862 (2013.01) [C23C 16/4405 (2013.01); H01J 37/32871 (2013.01); H01L 21/67069 (2013.01)] 6 Claims
OG exemplary drawing
 
1. Method of cleaning, by plasma-ion bombardment assisted dry chemical etching method, a reactor (10) having an undesirable deposit on its reactor walls and on at least one other biasable electrode surface (12), wherein during a step of producing plasma, there are submitted a plurality of alternating successions of:
a negative sequence (1) of cleaning the at least one biasable electrode surface by negative biasing of each electrode surface during the step of producing plasma, with respect to the potential said reactor walls; and
a positive sequence (2) of cleaning the walls of the reactor by positive biasing of at least one electrode surface during the step of producing plasma, with respect to the walls of the reactor, the walls being at a referenced potential, and wherein a periodic voltage referenced to a defined DC potential is directly applied to the at least one biasable electrode surface.