| US 9,812,296 B2 | ||
| Sputtering apparatus including gas distribution system | ||
| Klaus Hartig, Avoca, WI (US) | ||
| Assigned to Cardinal CG Company, Eden Prairie, MN (US) | ||
| Filed by Cardinal CG Company, Eden Prairie, MN (US) | ||
| Filed on Feb. 2, 2016, as Appl. No. 15/13,120. | ||
| Claims priority of provisional application 62/111,318, filed on Feb. 3, 2015. | ||
| Prior Publication US 2016/0233056 A1, Aug. 11, 2016 | ||
| Int. Cl. H01J 37/34 (2006.01); H01J 37/32 (2006.01); C23C 14/00 (2006.01); C23C 14/35 (2006.01) | ||
| CPC H01J 37/3244 (2013.01) [C23C 14/0063 (2013.01); C23C 14/35 (2013.01); H01J 37/32449 (2013.01); H01J 37/3405 (2013.01); H01J 37/347 (2013.01); H01J 37/3417 (2013.01); H01J 37/3438 (2013.01); H01J 37/3464 (2013.01); H01J 2237/006 (2013.01); H01J 2237/327 (2013.01); H01J 2237/332 (2013.01)] | 13 Claims |
| 1. A magnetron sputtering apparatus, comprising:
a vacuum chamber providing a controlled environment;
a cylindrical target comprising one or more sputterable materials, wherein the cylindrical target includes a sputtering zone
that is racetrack shaped and extends longitudinally along a longitudinal axis, and the sputtering zone includes two straightaway
areas sandwiched between first and second turnaround areas;
a gas distribution system comprising a plurality of interfaces extending along the longitudinal axis, wherein the plurality
of interfaces includes a plurality of first interfaces and a plurality of second interfaces, the first interfaces positioned
at each of the first and second turnaround areas to supply a first gas mixture to both of the first and second turnaround
areas, such that the first gas mixture controls sputtering rate at localized areas of both of the first and second turnaround
areas, whereas the second interfaces are positioned at each of the two straightaway areas to supply a second gas mixture to
both of the two straightaway areas, such that the second gas mixture controls sputtering rate at localized areas of both of
the two straightaway areas, the first interfaces positioned along first and third longitudinal distances, the second interfaces
positioned along a second longitudinal distance, such that the first, second, and third longitudinal distances do not overlap;
wherein the first gas mixture is supplied to the first interfaces and the second gas mixture is supplied to the second interfaces,
wherein the first gas mixture includes a single inert gas or two or more inert gases having a first atomic weight, and the
second gas mixture includes a single inert gas or two or more inert gases having a second atomic weight, wherein the first
atomic weight is an atomic weight of the single inert gas or an average atomic weight of the two or more inert gases in the
first gas mixture and the second atomic weight is an atomic weight of the single inert gas or an average atomic weight of
the two or more inert gases in the second gas mixture, and wherein the first atomic weight is different from the second atomic
weight, the second atomic weight being heavier than the first atomic weight, the gas distribution system thereby providing
more uniform sputtering rates across the first and second turnaround areas and the two straightaway areas than if only an
argon gas atmosphere were provided to the first and second turnaround areas and the two straightaway areas, and wherein each
of the first gas mixture and the second gas mixture is free of reactive gas.
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