US 9,812,292 B2
Etching method
Hidekazu Iida, Tokyo (JP)
Assigned to Disco Corporation, Tokyo (JP)
Filed on Nov. 5, 2015, as Appl. No. 14/933,259.
Claims priority of application No. 2014-228755 (JP), filed on Nov. 11, 2014.
Prior Publication US 2016/0260624 A1, Sep. 8, 2016
Int. Cl. H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01)
CPC H01J 37/32009 (2013.01) [H01L 21/02041 (2013.01); H01L 21/3065 (2013.01); H01L 21/30621 (2013.01); H01L 21/67109 (2013.01); H01L 21/6838 (2013.01); H01J 2237/334 (2013.01)] 1 Claim
OG exemplary drawing
1. An etching method for a workpiece, comprising:
A workpiece loading step for loading a workpiece with a moisture attached thereon into a chamber;
a workpiece holding step for holding the moisture attached workpiece by a holding table with a ground surface of the workpiece oriented upward;
an evacuating step for evacuating the chamber to obtain a vacuum condition within the chamber after holding the workpiece by the holding table;
a moisture removing step of supplying an inert gas into the chamber storing said workpiece in a condition where said chamber has been evacuated and dissociating said inert gas under first processing conditions to form a first plasma and thereby remove moisture present on said workpiece and dry the workpiece; and
an etching step of supplying a fluorine-based stable gas instead of said inert gas into said chamber kept in the vacuum condition after performing said moisture removing step, and blowing said fluorine-based stable gas toward said workpiece and dissociating said fluorine-based stable gas under second processing conditions to form a second plasma and thereby dry-etch said dried workpiece.