| US 9,812,292 B2 | ||
| Etching method | ||
| Hidekazu Iida, Tokyo (JP) | ||
| Assigned to Disco Corporation, Tokyo (JP) | ||
| Filed by DISCO CORPORATION, Tokyo (JP) | ||
| Filed on Nov. 5, 2015, as Appl. No. 14/933,259. | ||
| Claims priority of application No. 2014-228755 (JP), filed on Nov. 11, 2014. | ||
| Prior Publication US 2016/0260624 A1, Sep. 8, 2016 | ||
| Int. Cl. H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01) | ||
| CPC H01J 37/32009 (2013.01) [H01L 21/02041 (2013.01); H01L 21/3065 (2013.01); H01L 21/30621 (2013.01); H01L 21/67109 (2013.01); H01L 21/6838 (2013.01); H01J 2237/334 (2013.01)] | 1 Claim |
| 1. An etching method for a workpiece, comprising:
A workpiece loading step for loading a workpiece with a moisture attached thereon into a chamber;
a workpiece holding step for holding the moisture attached workpiece by a holding table with a ground surface of the workpiece
oriented upward;
an evacuating step for evacuating the chamber to obtain a vacuum condition within the chamber after holding the workpiece
by the holding table;
a moisture removing step of supplying an inert gas into the chamber storing said workpiece in a condition where said chamber
has been evacuated and dissociating said inert gas under first processing conditions to form a first plasma and thereby remove
moisture present on said workpiece and dry the workpiece; and
an etching step of supplying a fluorine-based stable gas instead of said inert gas into said chamber kept in the vacuum condition
after performing said moisture removing step, and blowing said fluorine-based stable gas toward said workpiece and dissociating
said fluorine-based stable gas under second processing conditions to form a second plasma and thereby dry-etch said dried
workpiece.
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