US 9,812,291 B2
Alternate materials and mixtures to minimize phosphorus buildup in implant applications
Richard S. Ray, New Milford, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Appl. No. 14/378,652
Filed by Entegris, Inc., Billerica, MA (US)
PCT Filed Feb. 14, 2013, PCT No. PCT/US2013/026064
§ 371(c)(1), (2) Date Aug. 14, 2014,
PCT Pub. No. WO2013/123140, PCT Pub. Date Aug. 22, 2013.
Claims priority of provisional application 61/598,704, filed on Feb. 14, 2012.
Prior Publication US 2015/0037511 A1, Feb. 5, 2015
Int. Cl. H01J 37/317 (2006.01); H01J 37/08 (2006.01); C23C 14/06 (2006.01); C23C 14/48 (2006.01); C23C 14/52 (2006.01); C23C 14/54 (2006.01)
CPC H01J 37/3171 (2013.01) [C23C 14/0694 (2013.01); C23C 14/48 (2013.01); C23C 14/52 (2013.01); C23C 14/54 (2013.01); H01J 37/08 (2013.01); H01J 2237/006 (2013.01); H01J 2237/022 (2013.01)] 3 Claims
OG exemplary drawing
 
1. An ion implantation system, comprising:
an ion implanter arranged to receive phosphorus dopant source material, generate phosphorus dopant species therefrom, and implant the phosphorus dopant species in a substrate; and
a supply assembly arranged to deliver phosphorus dopant source material to the ion implanter, wherein the supply assembly comprises one of:
(i) phosphorus dopant source material supply vessels comprising a first supply vessel holding a first phosphorus dopant composition, and a second supply vessel holding a second phosphorus dopant composition, wherein the first and second phosphorus dopant compositions are different from one another, and wherein the supply assembly is arranged to deliver the first phosphorus dopant composition to the ion implanter during a first period of phosphorus ion implantation, and to deliver the second phosphorus dopant composition to the ion implanter during a second period of phosphorus ion implantation, the supply assembly comprising a gas analyzer configured to analyze a composition of the phosphorus dopant source material delivered to the ion implanter and central processor unit in communication with the gas analyzer and arranged to controllably dispense the first and second phosphorus dopant compositions to the ion implanter during ion implantation operation thereof during said first and second periods, respectively, to achieve a desired composition of the phosphorus dopant source material as determined by the gas analyzer; or
(ii) a phosphorus dopant source material mixing vessel holding a phosphorus dopant source mixture comprising different phosphorus fluorides, and wherein the supply assembly is configured to deliver the phosphorus dopant source mixture to the ion implanter, the supply assembly comprising a gas analyzer configured to analyze a composition of the phosphorous dopant source mixture delivered to the ion implanter during an implantation operation thereof and a central processor unit in communication with the gas analyzer arranged to controllably control a supply of the different phosphorus fluorides to the mixing vessel to achieve a desired composition of the phosphorous dopant source mixture delivered to the ion implanter as determined by the gas analyzer.