| US 9,812,258 B2 | ||
| Ceramic electronic component | ||
| Takashi Omori, Nagaokakyo (JP); and Seiji Koga, Nagaokakyo (JP) | ||
| Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu (JP) | ||
| Filed by MURATA MANUFACTURING CO., LTD., Nagaokakyo-shi, Kyoto-Fu (JP) | ||
| Filed on Sep. 12, 2014, as Appl. No. 14/484,389. | ||
| Application 14/484,389 is a continuation of application No. PCT/JP2013/053691, filed on Feb. 15, 2013. | ||
| Claims priority of application No. 2012-061568 (JP), filed on Mar. 19, 2012. | ||
| Prior Publication US 2014/0376155 A1, Dec. 25, 2014 | ||
| Int. Cl. H01G 4/008 (2006.01); H01G 4/30 (2006.01); H01G 4/06 (2006.01); H01G 4/232 (2006.01); H01G 4/228 (2006.01) | ||
| CPC H01G 4/008 (2013.01) [H01G 4/228 (2013.01); H01G 4/232 (2013.01); H01G 4/2325 (2013.01); H01G 4/30 (2013.01)] | 5 Claims |
| 1. A ceramic electronic component comprising:
a ceramic body having opposed end portions; and
outer electrodes each respectively covering one of the opposed end portions of the ceramic body, each outer electrode including:
an end-surface portion;
a side-surface turnover portion; and
a glass layer in contact with the ceramic body in a region within at least 5 μm in linear distance from a covering end portion
of the side-surface turnover portion and extending in a direction toward the end-surface portion, and which contains, at least,
Si, wherein
the glass layer is non-conductive;
an average thickness of the glass layer is 3 μm to 10 μm; and
a content of the Si in the glass layer is 11% to 40% by weight.
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