US 9,812,184 B2
Current induced spin-momentum transfer stack with dual insulating layers
Andrew Kent, New York, NY (US); Daniel Bedau, San Jose, CA (US); and Huanlong Liu, New York, NY (US)
Assigned to NEW YORK UNIVERSITY, New York, NY (US)
Filed by New York University, New York, NY (US)
Filed on Aug. 31, 2016, as Appl. No. 15/253,416.
Application 13/041,104 is a division of application No. 12/490,588, filed on Jun. 24, 2009, granted, now 7,911,832.
Application 15/253,416 is a continuation of application No. 14/792,753, filed on Jul. 7, 2015, granted, now 9,449,668.
Application 14/792,753 is a continuation of application No. 14/264,685, filed on Apr. 29, 2014, granted, now 9,236,103.
Application 14/264,685 is a continuation of application No. 13/298,190, filed on Nov. 16, 2011, granted, now 8,755,222.
Application 13/298,190 is a continuation in part of application No. 13/041,104, filed on Mar. 4, 2011, granted, now 8,363,465.
Application 12/490,588 is a continuation in part of application No. 11/932,745, filed on Oct. 31, 2007, granted, now 7,573,737.
Claims priority of provisional application 61/414,724, filed on Nov. 17, 2010.
Prior Publication US 2017/0236570 A1, Aug. 17, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/14 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01)
CPC G11C 11/161 (2013.01) [G11C 11/1653 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); H01L 27/226 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A magnetic device comprising:
a pinned magnetic layer with a magnetization vector having a fixed magnetization direction at a non-zero acute angle relative to a normal of a plane of the pinned magnetic layer;
a free magnetic layer with at least one magnetization vector having a changeable magnetization direction, wherein the magnetization vector of the free magnetic layer has at least a first stable state and a second stable state, and wherein the first and second stable states both have magnetization directions that are perpendicular to a plane of the free magnetic layer; and
a nonmagnetic layer spatially separating the pinned magnetic layer and the free magnetic layer, wherein application of a current pulse of sufficient amplitude and duration through the magnetic device switches the magnetization vector of the free magnetic layer between the first and second stable states.