| US 9,812,184 B2 | ||
| Current induced spin-momentum transfer stack with dual insulating layers | ||
| Andrew Kent, New York, NY (US); Daniel Bedau, San Jose, CA (US); and Huanlong Liu, New York, NY (US) | ||
| Assigned to NEW YORK UNIVERSITY, New York, NY (US) | ||
| Filed by New York University, New York, NY (US) | ||
| Filed on Aug. 31, 2016, as Appl. No. 15/253,416. | ||
| Application 13/041,104 is a division of application No. 12/490,588, filed on Jun. 24, 2009, granted, now 7,911,832. | ||
| Application 15/253,416 is a continuation of application No. 14/792,753, filed on Jul. 7, 2015, granted, now 9,449,668. | ||
| Application 14/792,753 is a continuation of application No. 14/264,685, filed on Apr. 29, 2014, granted, now 9,236,103. | ||
| Application 14/264,685 is a continuation of application No. 13/298,190, filed on Nov. 16, 2011, granted, now 8,755,222. | ||
| Application 13/298,190 is a continuation in part of application No. 13/041,104, filed on Mar. 4, 2011, granted, now 8,363,465. | ||
| Application 12/490,588 is a continuation in part of application No. 11/932,745, filed on Oct. 31, 2007, granted, now 7,573,737. | ||
| Claims priority of provisional application 61/414,724, filed on Nov. 17, 2010. | ||
| Prior Publication US 2017/0236570 A1, Aug. 17, 2017 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 11/14 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01) | ||
| CPC G11C 11/161 (2013.01) [G11C 11/1653 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); H01L 27/226 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01)] | 20 Claims |
| 1. A magnetic device comprising:
a pinned magnetic layer with a magnetization vector having a fixed magnetization direction at a non-zero acute angle relative
to a normal of a plane of the pinned magnetic layer;
a free magnetic layer with at least one magnetization vector having a changeable magnetization direction, wherein the magnetization
vector of the free magnetic layer has at least a first stable state and a second stable state, and wherein the first and second
stable states both have magnetization directions that are perpendicular to a plane of the free magnetic layer; and
a nonmagnetic layer spatially separating the pinned magnetic layer and the free magnetic layer, wherein application of a current
pulse of sufficient amplitude and duration through the magnetic device switches the magnetization vector of the free magnetic
layer between the first and second stable states.
|