US 9,811,010 B2
Electrophotographic photosensitive member, process cartridge, and image forming apparatus
Yasuhiro Niida, Kanagawa (JP); Kazuyuki Tada, Kanagawa (JP); Jiro Korenaga, Kanagawa (JP); and Yukimi Kawabata, Kanagawa (JP)
Assigned to FUJI XEROX CO., LTD., Tokyo (JP)
Filed by FUJI XEROX CO., LTD., Tokyo (JP)
Filed on Feb. 5, 2016, as Appl. No. 15/16,350.
Claims priority of application No. 2015-161912 (JP), filed on Aug. 19, 2015.
Prior Publication US 2017/0052464 A1, Feb. 23, 2017
Int. Cl. G03G 5/06 (2006.01); G03G 5/043 (2006.01); G03G 15/00 (2006.01); G03G 21/18 (2006.01)
CPC G03G 5/043 (2013.01) [G03G 5/0607 (2013.01); G03G 15/75 (2013.01); G03G 21/18 (2013.01); G03G 21/1814 (2013.01)] 9 Claims
 
1. An electrophotographic photosensitive member comprising:
a conductive base; and
a single-layer photosensitive layer on the conductive base, the photosensitive layer containing:
a binder resin,
a charge generation material,
a hole transport material,
a fluorine-atom-containing electron transport material, and
fluorine-atom-containing resin particles,
wherein:
an amount of the charge generation material in the photosensitive layer is 0.5% by weight or more and less than 2.0% by weight,
the charge generation material has a distribution that satisfies formula (1) in a thickness direction of the photosensitive layer:
30≤a/b  Formula (1):
where a represents a concentration of the charge generation material in a region extending ⅓ of a thickness of the photosensitive layer from a surface side of the photosensitive layer, and b represents a concentration of the charge generation material in a region extending ⅔ of the thickness of the photosensitive layer from a conductive-base side of the photosensitive layer and may be 0, and
the fluorine-atom-containing electron transport material has a distribution that satisfies formula (2) in the thickness direction of the photosensitive layer:
30≤c/d  Formula (2):
where c represents a concentration of the fluorine-atom-containing electron transport material in the region extending ⅓ of the thickness of the photosensitive layer from the surface side of the photosensitive layer, and d represents a concentration of the fluorine-atom-containing electron transport material in the region extending ⅔ of the thickness of the photosensitive layer from the conductive-base side of the photosensitive layer and may be 0.