US 9,810,994 B2
Systems and methods for high-throughput and small-footprint scanning exposure for lithography
Burn Jeng Lin, HsinChu (TW); Shy-Jay Lin, Jhudong Township (TW); Jaw-Jung Shin, HsinChu (TW); and Wen-Chuan Wang, HsinChu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Dec. 6, 2016, as Appl. No. 15/370,174.
Application 15/370,174 is a continuation of application No. 14/962,266, filed on Dec. 8, 2015, granted, now 9,519,225.
Application 14/962,266 is a continuation of application No. 14/030,490, filed on Sep. 18, 2013, granted, now 9,229,332, issued on Jan. 5, 2016.
Prior Publication US 2017/0082926 A1, Mar. 23, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. G03B 27/32 (2006.01); G03B 27/44 (2006.01); G03B 27/54 (2006.01); H02K 41/02 (2006.01); G03F 7/20 (2006.01); H01L 21/68 (2006.01)
CPC G03F 7/70275 (2013.01) [G03F 7/70008 (2013.01); G03F 7/7015 (2013.01); G03F 7/70208 (2013.01); G03F 7/70358 (2013.01); G03F 7/70716 (2013.01); G03F 7/70725 (2013.01); H01L 21/682 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A lithography apparatus, comprising:
a radiation source configured to produce radiation;
a first unit column assembly (UCA) that includes a first row and a third row of exposure columns each packed in a first direction; and.
a second unit column assembly (UCA) disposed adjacent to the first UCA in a second direction, the second direction being different from the first direction, wherein the second UCA includes a second row and a fourth row of exposure columns each packed in the first direction, wherein the second row of exposure columns is shifted in the first direction with respect to the first row of exposure columns by a first distance, and wherein the third row of exposure columns is shifted in the first direction with respect to the first row of exposure columns by a second distance that is greater than the first distance.