US 9,810,990 B2
Chemical treatment for lithography improvement in a negative tone development process
Wei-Han Lai, Hsin-Chu (TW); Ching-Yu Chang, Hsin-Chu (TW); Cheng-Han Wu, Hsin-Chu (TW); Siao-Shan Wang, Hsin-Chu (TW); and Chin-Hsiang Lin, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed on Mar. 16, 2015, as Appl. No. 14/658,354.
Prior Publication US 2016/0274463 A1, Sep. 22, 2016
Int. Cl. G03F 7/38 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01); G03F 7/038 (2006.01)
CPC G03F 7/325 (2013.01) [G03F 7/0382 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01)] 20 Claims
 
1. A method of fabricating a semiconductor device, comprising:
forming a material layer over a substrate, wherein the material layer has an acidity;
coating a negative tone photoresist layer over the material layer;
performing an exposure process to the negative tone photoresist layer;
performing a post-exposure bake (PEB) process to the negative tone photoresist layer;
developing the negative tone photoresist layer after the PEB process, wherein photoresist scum remains at a bottom of a developed negative tone photoresist layer, wherein the photoresist scum is produced due to a sensitivity of the negative tone photoresist layer to the acidity of the material layer; and
removing the photoresist scum from the developed negative tone photoresist layer using a solvent, wherein the solvent contains a chemical having a greater dipole moment than n-butyl acetate (n-BA).